Solution-processed amorphous gallium oxide gate dielectric for low-voltage operation oxide thin film transistors
Crossref DOI link: https://doi.org/10.1007/s10854-021-05408-5
Published Online: 2021-03-24
Published Print: 2021-04
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Yuan, Li
Li, Shasha
Song, Guoxiang
Sun, Xian wen
Zhang, Xinan http://orcid.org/0000-0003-2670-018X
Funding for this research was provided by:
National Natural Science Foundation of China (U1504625)
Text and Data Mining valid from 2021-03-24
Version of Record valid from 2021-03-24
Article History
Received: 19 November 2020
Accepted: 27 January 2021
First Online: 24 March 2021