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Study on dielectric properties of PVP and Al2O3 thin films and their implementation in low-temperature solution-processed IGZO-based thin-film transistors

Crossref DOI link: https://doi.org/10.1007/s10854-021-05512-6

Published Online: 2021-02-25

Published Print: 2021-03

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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