Effect of atomic-layer-deposited HfO2 thin-film interfacial layer on the electrical properties of Au/Ti/n-GaAs Schottky diode
Crossref DOI link: https://doi.org/10.1007/s10854-021-05676-1
Published Online: 2021-03-26
Published Print: 2021-04
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Yıldız, D. E. http://orcid.org/0000-0003-2212-199X
Karabulut, A.
Orak, İ.
Turut, A.
Text and Data Mining valid from 2021-03-26
Version of Record valid from 2021-03-26
Article History
Received: 2 January 2021
Accepted: 3 March 2021
First Online: 26 March 2021