Tunable optoelectronic properties of a two-dimensional graphene/α-In2Se3/graphene-based ferroelectric semiconductor field-effect transistor
Crossref DOI link: https://doi.org/10.1007/s10854-021-06528-8
Published Online: 2021-07-06
Published Print: 2021-08
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Abderrahmane, Abdelkader
Woo, Changlim
Ko, Pil Ju http://orcid.org/0000-0002-1603-6978
Funding for this research was provided by:
National Research Foundation of Korea (NRF-2019H1D3A1A01102658)
Text and Data Mining valid from 2021-07-06
Version of Record valid from 2021-07-06
Article History
Received: 12 March 2021
Accepted: 29 June 2021
First Online: 6 July 2021