Structural and electrical properties of epitaxial SnO2: Sb films deposited on 6 H-SiC by MOCVD
Crossref DOI link: https://doi.org/10.1007/s10854-021-06701-z
Published Online: 2021-08-02
Published Print: 2021-08
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Luan, Caina https://orcid.org/0000-0002-0644-5356
Zhu, Zhen
Funding for this research was provided by:
National Natural Science Foundation of China (50872073)
Text and Data Mining valid from 2021-08-01
Version of Record valid from 2021-08-01
Article History
Received: 29 March 2021
Accepted: 24 July 2021
First Online: 2 August 2021