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Solution processed low-voltage metal-oxide transistor by using TiO2/Li–Al2O3 stacked gate dielectric

Published Online: 2022-01-29

Published Print: 2022-04

Authors

Pal, Nila

Pandey, Utkarsh

Biring, Sajal

Pal, Bhola N. https://orcid.org/0000-0001-7512-3441
Funding

Funding for this research was provided by:

Science and Engineering Research Board (CRG/2019/001826, EMR/2015/000689)
License Information

Text and Data Mining valid from 2022-01-29

Version of Record valid from 2022-01-29
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Article History

Received: 20 March 2021

Accepted: 10 December 2021

First Online: 29 January 2022

Declarations

:

: The authors declare no competing financial interest.

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