Effect of illumination intensity on the electrical characteristics of Au//SiO2/n-type Si structures with GO and P3C4MT interface layer
Crossref DOI link: https://doi.org/10.1007/s10854-022-08801-w
Published Online: 2022-08-02
Published Print: 2022-08
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Seymen, Halil
Berk, Niyazi
Orak, İkram
Karataş, Şükrü https://orcid.org/0000-0003-1668-7866
Text and Data Mining valid from 2022-08-01
Version of Record valid from 2022-08-01
Article History
Received: 13 June 2022
Accepted: 19 July 2022
First Online: 2 August 2022
Declarations
:
: The authors declare that there is no conflict of interest.
: All the authors declare their consent to participate in this research article.