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Embedded metal and L-shaped oxide layers in silicon on insulator MESFETs: higher electric field tolerance and lower high frequency gate capacitances

Crossref DOI link: https://doi.org/10.1007/s10854-022-08816-3

Published Online: 2022-08-04

Published Print: 2022-09

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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