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Characterization and fabrication of indium doped LaPO4 as an interfacial layer of Cu/In–LaPO4/n–Si and developed for Schottky barrier diode

Published Online: 2023-02-04

Published Print: 2023-02

Authors

Priya, R.

Mariappan, R. https://orcid.org/0000-0002-8407-7560
Chandrasekaran, J.

Balasubramani, V.
Funding

Funding for this research was provided by:

University Grants Commission (MRP-4892/14 (SERO/UGC)))
License Information

Text and Data Mining valid from 2023-02-01

Version of Record valid from 2023-02-01
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Article History

Received: 24 September 2022

Accepted: 8 January 2023

First Online: 4 February 2023

Declarations

:

: The authors declare that they have no conflict of interest.

: Not applicable.

: The final version of the manuscript was reviewed and approved by all authors.

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