SnO2: rGO transparent semiconducting thin films under annealing by hydrazine—modification of optical gap and electrical resistance
Crossref DOI link: https://doi.org/10.1007/s10854-023-10225-z
Published Online: 2023-03-20
Published Print: 2023-03
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Sabzevar, P. Shayeghi
Bagheri-Mohagheghi, M. M. http://orcid.org/0000-0002-8642-7456
Shirpay, A.
Text and Data Mining valid from 2023-03-01
Version of Record valid from 2023-03-01
Article History
Received: 29 January 2023
Accepted: 3 March 2023
First Online: 20 March 2023
Declarations
:
: The authors have no relevant financial or non-financial interests to disclose.
: Not applicable.