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Silicon surface passivation of industrial n-type CZ Si (111) by Al2O3 layers deposited by thermal ALD process for application in carrier selective contact solar cells

Crossref DOI link: https://doi.org/10.1007/s10854-023-10587-4

Published Online: 2023-05-20

Published Print: 2023-05

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Dsouza, Namitha

Singh, Ashish K.

Maurya, Rajesh

Kanakala, Rajesh

Madaka, Ramakrishna

Bandaru, Narendra

Uddin, Md. Seraj

Rath, Jatindra K. https://orcid.org/0000-0003-0320-6808
Funding

Funding for this research was provided by:

Department of Science and Technology (DST), Government of India
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Article History

Received: 7 March 2023

Accepted: 8 May 2023

First Online: 20 May 2023

Declarations

:

: The authors declare no conflict of interest.

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