Resistive switching in ZnO/MoOx bilayer for non-volatile memory applications
Crossref DOI link: https://doi.org/10.1007/s10854-023-10868-y
Published Online: 2023-07-04
Published Print: 2023-07
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Manoj, Sandra http://orcid.org/0009-0003-7451-1137
Sharon, Antony
Subin, P. S.
Antony, Aldrin
Text and Data Mining valid from 2023-07-01
Version of Record valid from 2023-07-01
Article History
Received: 24 February 2023
Accepted: 17 June 2023
First Online: 4 July 2023
Declarations
:
: The authors declare that they have no conflict of interest.