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Influence of deep reactive ion etching process parameters on etch selectivity and anisotropy in stacked silicon substrates for fabrication of comb-type MEMS capacitive accelerometer

Crossref DOI link: https://doi.org/10.1007/s10854-023-11722-x

Published Online: 2023-12-11

Published Print: 2023-12

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Dutta, Shankar https://orcid.org/0000-0001-7627-8437
Yadav, Isha

Kumar, Praveen

Pal, Ramjay
License Information

Text and Data Mining valid from 2023-12-01

Version of Record valid from 2023-12-01
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Article History

Received: 7 October 2023

Accepted: 27 November 2023

First Online: 11 December 2023

Declarations

:

: The authors have no relevant financial or non-financial interests to disclose.

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