Crossmark

Exploring the influence of Al content on the optical and interface properties of HfAlOx mixed gate dielectric thin films and their applications in MOS devices

Crossref DOI link: https://doi.org/10.1007/s10854-024-13616-y

Published Online: 2024-10-01

Published Print: 2024-10

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Zhang, Renjia

Tuokedaerhan, Kamale https://orcid.org/0000-0002-6275-1462
Du, Hongguo

Maimaiti, Ahemaitijiang

Ibraimov, Margulan
Funding

Funding for this research was provided by:

Natural Science Foundation of Xinjiang Uygur Autonomous Region (Grant No. 2021D01C035)

National Natural Science Foundation of China (Grant No. 62141402)
License Information

Text and Data Mining valid from 2024-10-01

Version of Record valid from 2024-10-01
More Information

Article History

Received: 29 January 2024

Accepted: 24 September 2024

First Online: 1 October 2024

Declarations

:

: The authors have no relevant financial or non-financial interests to disclose.

: All authors have reviewed the final version of the manuscript and approved its publication. All authors confirm that this work is original.

Document is current

Any future updates will be listed below