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Enhancement of silicon nitride layer performance by Gallium–Copper–Zinc tri-layer thin films structure via plasma featured chemical vapour deposition route

Crossref DOI link: https://doi.org/10.1007/s10854-025-14326-9

Published Online: 2025-02-01

Published Print: 2025-02

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Venkatesh, R. https://orcid.org/0000-0002-9057-8185
Singh, Pradeep Kumar

Venkatasubramanian, R.

Vaidyanathan, Ishwarya Mayiladuthurai

Deshwal, Deepti

Soudagar, Manzoore Elahi M.

Mohanavel, Vinayagam

Al Obaid, Sami

Alharbi, Sulaiman Ali
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Article History

Received: 11 October 2024

Accepted: 30 December 2024

First Online: 1 February 2025

Declarations

:

: The authors have no relevant financial or non-financial interests to disclose.

: This is an observational study. Enhancement of silicon nitride layer performance by Gallium–Copper–Zinc tri-layer thin films structure via plasma featured chemical vapour deposition route: The Research Ethics Committee has confirmed that no ethical approval is required.

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