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Effects of RF-sputtering conditions and top electrode configuration on resistive switching behavior in TiO2-based memory devices

Published Online: 2025-06-09

Published Print: 2025-06

Authors

Zhang, Wei https://orcid.org/0000-0002-7152-8174
Liu, Jun

Qiu, Luobin

Hu, Fangren
Funding

Funding for this research was provided by:

National Natural Science Foundation of China (51602160)

National Natural Science Foundation of China (61605086)

Natural Science Foundation of Jiangsu Province (BK20150842)
License Information

Text and Data Mining valid from 2025-06-01

Version of Record valid from 2025-06-01
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Article History

Received: 17 March 2025

Accepted: 22 May 2025

First Online: 9 June 2025

Declarations

:

: The authors declare no conflict of interests.

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