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Zirconium-doping improved resistive switching characteristics of cobalt oxide resistive random access memory devices

Published Online: 2025-06-22

Published Print: 2025-06

Authors

Liao, Qi

Du, Ling

Qin, Ni

Lou, Zhuoyang

Bao, Dinghua https://orcid.org/0000-0002-1055-4264
Funding

Funding for this research was provided by:

Guangdong Provincial Key-Area R&D Program (2023B0101200008)

National Natural Science Foundation of China (51872335)
License Information

Text and Data Mining valid from 2025-06-01

Version of Record valid from 2025-06-01
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Article History

Received: 21 December 2024

Accepted: 9 June 2025

First Online: 22 June 2025

Declarations

:

: The authors have no competing interests to declare that are relevant to the content of this article.

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