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Hydride vapour phase epitaxy processing and enhancement of optoelectronic behaviour of gallium nitride compound semiconductor featured with silicon carbide layer

Crossref DOI link: https://doi.org/10.1007/s10854-025-15590-5

Published Online: 2025-08-24

Published Print: 2025-08

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Revathi, K.

Nagabhooshanam, N.

Gajbhiye, Pragati

Kulshreshta, Ankur

Indumathi, S. M.

Samyul, A.

Seshu Kumar, G. S. V.

Srinivasan, R. https://orcid.org/0009-0006-6166-3053
Sathiyamurthy, S.
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Text and Data Mining valid from 2025-08-01

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Article History

Received: 19 April 2025

Accepted: 12 August 2025

First Online: 24 August 2025

Declarations

:

: The authors have no relevant financial or non-financial interests to disclose.

: This is an observational study. Hydride vapour phase epitaxy processing and enhancement of optoelectronic behaviour of gallium nitride compound semiconductor featured with silicon carbide layer: The Research Ethics Committee has confirmed that no ethical approval is required.

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