Temperature-dependent electrostatic, linearity, and analog/RF performance of GaN HEMT
Crossref DOI link: https://doi.org/10.1007/s10854-025-15753-4
Published Online: 2025-09-09
Published Print: 2025-09
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Alam, Sabrina
Gaquiere, Christophe
Alim, Mohammad Abdul https://orcid.org/0000-0002-3984-0176
Text and Data Mining valid from 2025-09-01
Version of Record valid from 2025-09-01
Article History
Received: 9 December 2024
Accepted: 25 August 2025
First Online: 9 September 2025
Declarations
:
: The authors declare no conflict of interest.