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Characterization of Sc2O3/SiO2/SiC MOS capacitors: role of annealing temperature on microstructural and electrical properties

Published Online: 2025-09-24

Published Print: 2025-09

Authors

Nziengui, D.

Kaya, Ş.

Terzioğlu, R.

Terzioğlu, C. https://orcid.org/0000-0002-3944-0367
Funding

Funding for this research was provided by:

Ulusal Metroloji Enstitüsü, Türkiye Bilimsel ve Teknolojik Araştirma Kurumu (2016K12-2834)
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Text and Data Mining valid from 2025-09-01

Version of Record valid from 2025-09-01
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Article History

Received: 12 May 2025

Accepted: 14 September 2025

First Online: 24 September 2025

Declarations

:

: The authors have no relevant financial or non-financial interests to disclose. The authors have no potential conflicts of interest to disclose. The authors have no competing interests to declare that are relevant to the content of this article.

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