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Funding
Funding for this research was provided by:
Al Jouf University (DGSSR-2025-02-01241)
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Article History
Received: 24 July 2025
Accepted: 29 October 2025
First Online: 23 November 2025
Declarations
:
: We have no competing interest to declare.
: Hereby, I/Dr. Jihed Laifi/consciously assure that for the manuscript/Thermal Annealing of AlN-Capped Al x G 1− x N/GaN heterostructures: Impact on Physical Properties/ the following is fulfilled: This material is the authors’ own original work, which has not been previously published elsewhere. The paper is not currently being considered for publication elsewhere. The paper reflects the authors’ own research and analysis in a truthful and complete manner. The paper properly credits the meaningful contributions of co-authors. All authors have been personally and actively involved in substantial work leading to the paper and will take public responsibility for its content. The violation of the Ethical Statement rules may result in severe consequences.
