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Investigating 4H-SiC epilayer thickness variation in high-resolution Ni/Y₂O₃/4H-SiC MOS detectors

Crossref DOI link: https://doi.org/10.1007/s10854-025-16272-y

Published Online: 2025-11-28

Published Print: 2025-12

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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