Device behavior of Al/n-SnZnO/p-Si/Al heterojunction diode: effect of tin doping
Crossref DOI link: https://doi.org/10.1007/s10854-026-16882-0
Published Online: 2026-02-28
Published Print: 2026-02
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Mohammed, Yasir Hussein
Mohammed, Hala Nazar
Mohammed, Ali A.
Text and Data Mining valid from 2026-02-01
Version of Record valid from 2026-02-01
Article History
Received: 28 October 2025
Accepted: 22 February 2026
First Online: 28 February 2026
Declarations
:
: The authors declare no competing interests.