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Effect of oxygen vacancy control on the electrical performance and stability of amorphous Si–In–Zn–O thin-film transistors by adopting Ar plasma treatment

Crossref DOI link: https://doi.org/10.1007/s10854-026-17089-z

Published Online: 2026-03-28

Published Print: 2026-03

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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