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The trade-off between electrical performance and structural quality in silicon (n-type) and magnesium (p-type)-doped a-plane gallium nitride (GaN) on r-plane sapphire

Crossref DOI link: https://doi.org/10.1007/s10854-026-17256-2

Published Online: 2026-05-05

Published Print: 2026-05

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Abdullah, Nor Hapishah

Abu Bakar, Ahmad Shuhaimi https://orcid.org/0000-0002-2575-850X
Abdul Khudus, Muhammad Imran Mustafa

Mustaffa, Muhammad Syazwan

Kamarundzaman, Anas

Rizuan, Norhaniza

Zaidi, Nurin Jazlina
Funding

Funding for this research was provided by:

Ministry of Science and Technology (MOSTI005-2021SRF/SRF-APP PG1-P3)

Collaborative Research in Engineering, Science and Technology Centre ((T(G-E)03-22 / PV070-2024))

Collaborative Research in Engineering, Science and Technology Centre (PV058-2023)

Universiti Malaya
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Text and Data Mining valid from 2026-05-01

Version of Record valid from 2026-05-05
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Article History

Received: 20 August 2025

Accepted: 29 March 2026

First Online: 5 May 2026

Declarations

:

: The authors declare no competing financial or personal interests.

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