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Frequency effect on electrical and dielectric characteristics in InSe-interlayered MOS device

Crossref DOI link: https://doi.org/10.1007/s10854-026-17491-7

Published Online: 2026-05-21

Published Print: 2026-05

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Emir, C. https://orcid.org/0000-0003-4395-064X
Erkutlu, N. https://orcid.org/0000-0001-6574-4287
Özkara, B. https://orcid.org/0000-0001-9980-3994
Şahin, Y. https://orcid.org/0000-0002-8184-6440
Koç, E. https://orcid.org/0000-0002-6649-4598
Tataroğlu, A. https://orcid.org/0000-0003-2074-574X
Ocak, S. Bilge https://orcid.org/0000-0002-0590-7555
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Text and Data Mining valid from 2026-05-01

Version of Record valid from 2026-05-01
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Article History

Received: 21 February 2026

Accepted: 9 May 2026

First Online: 21 May 2026

Declarations

:

: The authors declare no competing interests.