Enhancing of Al/Sn-HfO2/n-Si (MIS) Schottky barrier diode performance through the incorporation of Sn ions on high dielectric HfO2 thin films formed by spray pyrolysis
Crossref DOI link: https://doi.org/10.1007/s10904-021-01997-0
Published Online: 2021-04-27
Published Print: 2021-09
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Harishsenthil, P.
Chandrasekaran, J.
Marnadu, R.
Shkir, Mohd
Text and Data Mining valid from 2021-04-27
Version of Record valid from 2021-04-27
Article History
Received: 3 February 2021
Accepted: 3 April 2021
First Online: 27 April 2021