Highly Anisotropic Parallel Conduction in the Stepped Substrate of Epitaxial Graphene Grown on Vicinal SiC
Crossref DOI link: https://doi.org/10.1007/s10909-015-1277-y
Published Online: 2015-01-22
Published Print: 2015-05
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Endo, Akira
Komori, Fumio
Morita, Kouhei
Kajiwara, Takashi
Tanaka, Satoru
Text and Data Mining valid from 2015-01-22