Development of Blocked-Impurity-Band-Type Ge Detectors Fabricated with the Surface-Activated Wafer Bonding Method for Far-Infrared Astronomy
Crossref DOI link: https://doi.org/10.1007/s10909-016-1484-1
Published Online: 2016-01-14
Published Print: 2016-07
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Hanaoka, M.
Kaneda, H.
Oyabu, S.
Yamagishi, M.
Hattori, Y.
Ukai, S.
Shichi, K.
Wada, T.
Suzuki, T.
Watanabe, K.
Nagase, K.
Baba, S.
Kochi, C.
Text and Data Mining valid from 2016-01-14