AlGaN-Based Deep UV Laser Diodes without an Electron Blocking Layer and with a Reduced Aluminum Composition of Quantum Barriers
Crossref DOI link: https://doi.org/10.1007/s10946-022-10096-5
Published Online: 2022-11-21
Published Print: 2022-11
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Khan, Sajid Ullah
Yao, Wang
Aoxiang, Zhang
Nawaz, Sharif Muhammad
Niass, Mussaab Ibrahim
Wang, Fang
Liu, Yuhuai
Text and Data Mining valid from 2022-11-01
Version of Record valid from 2022-11-01
Article History
Received: 11 September 2022
First Online: 21 November 2022