Investigation of Substitution of Cu and Se Atoms on the Electronic and Magnetic Properties of GaN Monolayer Nanosheet
Crossref DOI link: https://doi.org/10.1007/s10948-017-4492-8
Published Online: 2017-12-07
Published Print: 2018-07
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Bakhshayeshi, Ali
Taghavi Mendi, Rouhollah
Ghafoorian, Fatemeh
License valid from 2017-12-07