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Authors
Li, Heming
Wang, Xinming
Gong, Yuze
Zhao, Hongbin
Liu, Zhaobin
Tao, Lin
Dastan, Davoud
Ma, Ke https://orcid.org/0000-0001-7142-3789
Hu, Zhizhi
Sun, Mingming
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Funding
Funding for this research was provided by:
University of Science and Technology Liaoning Talent Project Grants (6003000322)
Education Department of Liaoning Province (LJKMZ20220660)
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Article History
Received: 25 July 2023
Accepted: 27 September 2023
First Online: 18 October 2023
Declarations
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: No experiments involving human participants and/or animals were carried out.
: There are no conflicts to declare.
: Herein, we report APDS modified Bisphenol A polyimides films as a communication substrate that could be applied under high frequency circumstances (10 GHz). In this work, three kinds of bisphenol A-containing diamine (BAPP, BAPP-2ME, and BAPP-2TF) are synthesized and polymerized with 6FDA to preparelow-dielectricPI films by means of thermal imidization. APDS are introduced into the PI with different mass fractions to obtain three series of PI films. Following the combination of trifluoromethylinto the molecular chain of PI, high frequency dielectric loss of modified PI films can be effectively reduced. The propertiesofthese materials (especially the dielectric properties) are thoroughly explored by APDS addition. The results show that the APDS addition process can offer low polarity of Si-O-Si bond whichleads to a decrease in PIs overall polarity, and causes a decrease of tan 𝛿. Silicone material has stronger hydrophobicity, which is more conducive to electrons uniform distribution in MPI films. Importantly, the dielectric constant and dielectric loss of the composite films at high frequencies are remarkably reduced to 2.48 and 0.00335, respectively.
