Solution-processed laminated ZrO2/Al2O3 dielectric for low-voltage indium zinc oxide thin-film transistors
Crossref DOI link: https://doi.org/10.1007/s10971-016-4205-y
Published Online: 2016-09-21
Published Print: 2017-02
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Han, Sun Woong
Park, Jee Ho
Yoo, Young Bum
Lee, Keun Ho
Kim, Kwang Hyun
Baik, Hong Koo
License valid from 2016-09-21