The deep investigation of structural and opto-electrical properties of Yb2O3 thin films and fabrication of Al/Yb2O3/p-Si (MIS) Schottky barrier diode
Crossref DOI link: https://doi.org/10.1007/s10971-021-05683-y
Published Online: 2022-01-09
Published Print: 2022-06
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Panneerselvam, A.
Mohan, K. S.
Marnadu, R.
Chandrasekaran, J.
Text and Data Mining valid from 2022-01-09
Version of Record valid from 2022-01-09
Article History
Received: 30 March 2021
Accepted: 30 October 2021
First Online: 9 January 2022
Compliance with ethical standards
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: The authors declare no competing interests.