Study on individual traps in metal–oxide–semiconductor field-effect transistors by means of thermally stimulated threshold voltage shift
Crossref DOI link: https://doi.org/10.1007/s10973-015-5097-8
Published Online: 2015-10-22
Published Print: 2015-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Yonamoto, Yoshiki http://orcid.org/0000-0002-7861-3224
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