Design consideration of GaAs-based blocked-impurity-band detector with the absorbing layer formed by ion implantation
Crossref DOI link: https://doi.org/10.1007/s11082-014-0064-3
Published Online: 2014-11-15
Published Print: 2015-06
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Wang, Xiaodong
Wang, Bingbing
Hou, Liwei
Xie, Wei
Chen, Xiaoyao
Pan, Ming
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