Analysis of direct current performance on N-polar GaN-based high-electron-mobility transistors for next-generation optoelectronic devices
Crossref DOI link: https://doi.org/10.1007/s11082-015-0128-z
Published Online: 2015-02-15
Published Print: 2015-08
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Liu, Cong
Wang, Chong
Chen, Xiaoyao
Yang, Yu
Text and Data Mining valid from 2015-02-15
