Photoelectric characteristics of InAlAs/InGaAs/InAs quantum dots-in-well between double barriers
Crossref DOI link: https://doi.org/10.1007/s11082-015-0360-6
Published Online: 2016-01-18
Published Print: 2016-02
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Wang, Wei-Wei
Ning, Wen-Guo
Zhang, Bin
Guo, Fang-Min
Funding for this research was provided by:
National Scientific Research Plan (China) (2011CB932903)
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