The method for calculation of carrier concentration in narrow-gap n-type doped Hg1−xCdxTe structures
Crossref DOI link: https://doi.org/10.1007/s11082-017-0941-7
Published Online: 2017-02-28
Published Print: 2017-03
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Jóźwikowska, Alina
Jóźwikowski, Krzysztof
Suligowski, Mariusz
Moszczyński, Paweł
Nietopiel, Michał
Funding for this research was provided by:
Polish National Science Centre (Project No DEC-2013/08/M/ST7/00913)
License valid from 2017-02-28