Current gain and external quantum efficiency modeling of GeSn based direct bandgap multiple quantum well heterojunction phototransistor
Crossref DOI link: https://doi.org/10.1007/s11082-017-0947-1
Published Online: 2017-03-04
Published Print: 2017-03
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Chakraborty, Vedatrayee
Dey, Swagata
Basu, Rikmantra
Mukhopadhyay, Bratati
Basu, P. K.
License valid from 2017-03-01