Effect of vacancy defect on optoelectronic properties of monolayer tungsten diselenide
Crossref DOI link: https://doi.org/10.1007/s11082-017-1266-2
Published Online: 2017-11-28
Published Print: 2018-01
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Cui, Zhen
Ke, Xizheng
Li, Enling
Wang, Xia
Ding, Yingchun
Liu, Tong
Li, Meiqin
Zhao, Binyue
License valid from 2017-11-28