Improvement of crystallinity and luminescence of GaN-based laser diode structure with suppressed curvature variation in active layers
Crossref DOI link: https://doi.org/10.1007/s11082-018-1689-4
Published Online: 2018-11-11
Published Print: 2018-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Lan, Tian
Zhou, Guangzheng
Li, Ying
Yu, Hongyan
Yao, Shun
Wang, Zhiyong http://orcid.org/0000-0002-8751-9432
Text and Data Mining valid from 2018-11-11
Article History
Received: 31 July 2018
Accepted: 7 November 2018
First Online: 11 November 2018