Increasing the internal quantum efficiency of green GaN-based light-emitting diodes by employing graded quantum well and electron blocking layer
Crossref DOI link: https://doi.org/10.1007/s11082-020-02423-4
Published Online: 2020-05-30
Published Print: 2020-06
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Usman, Muhammad http://orcid.org/0000-0003-3728-082X
Anwar, Abdur-Rehman
Munsif, Munaza
Malik, Shahzeb
Islam, Noor Ul
Jameel, Tariq
Text and Data Mining valid from 2020-05-30
Version of Record valid from 2020-05-30
Article History
Received: 25 February 2020
Accepted: 25 May 2020
First Online: 30 May 2020