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High internal quantum efficiency of green GaN-based light-emitting diodes by thickness-graded last well/last barrier and composition-graded electron blocking layer

Crossref DOI link: https://doi.org/10.1007/s11082-020-02436-z

Published Online: 2020-06-09

Published Print: 2020-06

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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