Eu based layered EuFAgX (X = S, Se and Te) magnetic semiconductors for optoelectronic and thermoelectric applications
Crossref DOI link: https://doi.org/10.1007/s11082-023-05580-4
Published Online: 2023-11-10
Published Print: 2023-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Al Salmah, Hessa
Mehmood, Shahid
Text and Data Mining valid from 2023-11-10
Version of Record valid from 2023-11-10
Article History
Received: 21 July 2023
Accepted: 11 October 2023
First Online: 10 November 2023
Declarations
:
: The authors declare that they have no competing interest.