Physico-Chemical Processes Induced by Electrical Breakdown and Discharge Responsible for Memory Effect in Krypton with < 10 ppm Nitrogen
Crossref DOI link: https://doi.org/10.1007/s11090-017-9870-2
Published Online: 2017-12-28
Published Print: 2018-03
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Pejović, Milić M.
Pejović, Momčilo M.
Stanković, Koviljka
License valid from 2017-12-28