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Individual Effects of Various Plasma-Related Factors on the High Aspect Ratio Oxide Etching Process at Low-Frequency Bias Power Using an Inductively Coupled Plasma System

Crossref DOI link: https://doi.org/10.1007/s11090-023-10363-6

Published Online: 2023-08-08

Published Print: 2024-01

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Son, Hye Jun

Efremov, Alexander

Choi, Gilyoung

Kwon, Kwang-Ho
Funding

Funding for this research was provided by:

Korea Institute of Energy Technology Evaluation and Planning

Ministry of Trade, Industry and Energy (20202010100020, 20202010100020, 20202010100020)
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Text and Data Mining valid from 2023-08-08

Version of Record valid from 2023-08-08
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Article History

Received: 23 April 2023

Accepted: 23 July 2023

First Online: 8 August 2023

Declarations

:

: The authors have no competing interests to declare that are relevant to the content of this article.

: Not applicable.

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