Effect of Magnesium Diffusion Into the Active Region of LED Structures with InGaN/GaN Quantum Wells on Internal Quantum Efficiency
Crossref DOI link: https://doi.org/10.1007/s11182-014-0271-1
Published Online: 2014-08-05
Published Print: 2014-08
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Romanov, I. S.
Prudaev, I. A.
Marmalyuk, А. А.
Kureshov, V. A.
Sabitov, D. R.
Маzalov, А. V.
Text and Data Mining valid from 2014-08-01