Total Conductance of MIS Structures Based on Graded-Gap p-Hg1–х Cd х Te (x =0.22–0.23) Grown by Molecular Beam Epitaxy
Crossref DOI link: https://doi.org/10.1007/s11182-014-0294-7
Published Online: 2014-10-21
Published Print: 2014-10
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Voitsekhovskii, A. V.
Nesmelov, S. N.
Dzyadukh, S. М.
Vasil’ev, V. V.
Varavin, V. S.
Dvoretskii, S. A.
Мikhailov, N. N.
Kuz’min, V. D.
Remesnik, V. G.
Text and Data Mining valid from 2014-10-01