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Admittance in MIS Structures Based on Graded-GAP MBE p-Hg1–х Cd х Te (x = 0.22–0.23) in the Strong Inversion Mode

Crossref DOI link: https://doi.org/10.1007/s11182-014-0345-0

Published Online: 2014-12-04

Published Print: 2014-12

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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